| 摘要 |
microlithography, specifically, photolithography. SUBSTANCE: functional photoresistive layer with thickness not less than maximum height of structure of layer of relief formed on surface of this functional layer is formed on substrate. Mentioned above layer is exposed to electromagnetic radiation in agreement with specified program with simultaneous development of exposed sections of photoresist. Pulse generator of laser radiation with time period necessary for removal of material of photoresist exposed with the use of one pulse out of exposure zone in process of development of latent image. Formed relief surface of this layer is dried after finish of development of photoresistive layer. EFFECT: formation of structures with preset parameters, raised accuracy of their formation. 1 cl |
