发明名称 |
Memory cell with a stacked capacitor |
摘要 |
A semiconductor memory cell includes a field effect transistor coupled to a storage capacitor that formed as a multilayer stack over the surface of the silicon chip of the cell. The capacitor is formed by three conformal layers over the surface of a cup-shaped contact hole in a silicon oxide layer overlying the surface of the chip.
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申请公布号 |
US6207524(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19980162867 |
申请日期 |
1998.09.29 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
GUTSCHE MARTIN |
分类号 |
H01L27/108;H01L21/8242;H01L27/10;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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