发明名称 Memory cell with a stacked capacitor
摘要 A semiconductor memory cell includes a field effect transistor coupled to a storage capacitor that formed as a multilayer stack over the surface of the silicon chip of the cell. The capacitor is formed by three conformal layers over the surface of a cup-shaped contact hole in a silicon oxide layer overlying the surface of the chip.
申请公布号 US6207524(B1) 申请公布日期 2001.03.27
申请号 US19980162867 申请日期 1998.09.29
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 GUTSCHE MARTIN
分类号 H01L27/108;H01L21/8242;H01L27/10;(IPC1-7):H01L21/20 主分类号 H01L27/108
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