发明名称 |
Method for fabricating capacitor of semiconductor device |
摘要 |
The invention relates to a method for fabricating a capacitor of a semiconductor device with greater capacitance by adding an aluminum containing compound in the process of depositing an amorphous Ta2O5 layer in a LPCVD chamber, differently from the conventional method, thereby obtaining a material Ta2O5-Al2O3 for forming a dielectric layer with higher structural stability and dielectric constant than the Ta2O5 layer.
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申请公布号 |
US6207528(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19990475678 |
申请日期 |
1999.12.30 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE KEE-JEUNG |
分类号 |
H01L27/108;H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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