| 摘要 |
Provided with a method of forming a capacitor of semiconductor devices including the steps of: forming a first insulating layer having a plurality of contact holes on a semiconductor substrate; forming a plug in each of the contact holes; sequentially forming a second insulating layer and a mask layer on the entire surface of the semiconductor substrate; selectively removing the mask layer to form a plurality of first mask patterns having a first line width between the plugs; selectively removing the first mask pattern to form second mask patterns having a second line width smaller than the first line width; removing the second insulating layer by using the second mask patterns as a mask so as to expose the plugs; sequentially forming a conductive layer and a third insulating layer on the entire surface of the semiconductor substrate for the sake of electrical connection to each plug; removing materials overlying the second insulating layer to expose the surface of the second insulating layer, and forming a lower electrode of capacitor composed of the conductive layer and each plug; and removing the third insulating layer and the second insulating layer to sequentially form a dielectric layer and an upper electrode of capacitor on the lower electrode of capacitor.
|
