Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

摘要

The invention comprises tungsten chemical-mechanical polishing processes using fixed abrasive polishing pads, and to tungsten layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In one implementation, a semiconductor wafer having a layer comprising tungsten at greater than or equal to 50% molar is provided. Such is positioned in proximity with a fixed abrasive chemical-mechanical polishing pad. A tungsten layer chemical-mechanical polishing solution is provided intermediate the wafer and pad. The solution comprises a tungsten oxidizing component present at from about 0.5% to 15% by volume and a pH of less than or equal to about 6.0. The tungsten comprising layer is chemical-mechanical polished with the fixed abrasive pad with the tungsten layer chemical-mechanical polishing solution being received between the wafer and the pad. In one implementation, tungsten from the layer is oxidized with a solution comprising a tungsten oxidizing component present at from about 0.5% to 15% by volume and a pH of less than or equal to about 6.0. One or both of tungsten and tungsten oxide is then polished from the tungsten comprising layer with a fixed abrasive chemical-mechanical polishing pad. In one implementation, the invention comprises a tungsten layer chemical-mechanical polishing solution.