发明名称 METHOD OF PRODUCING LEAD-TUNGSTATE SCINTILLATION SINGLE CRYSTAL
摘要 methods of crystal production, particularly, methods of production of lead-tungstate single crystals; applicable in manufacture of scintillation members used in detectors of high-energy ionizing radiations operating under conditions of high dose loads in registration circuits requiring high time resolution. SUBSTANCE: PWO single crystal is produced by Czochralski method on seed oriented at an angle up to 10 deg to crystallographic axis "a" under conditions of suppression of oxidation of crystal-forming ions and stoichiometrization of melt and alloying with admixtures of lanthanum, yttrium and niobium in amount of 0.001-0.1 wt.%, and admixture of molybdenum in the form of PbMoO4 in amount to obtain molybdenum content in finished crystal of 0.01-0.1 wt.%. Scintillation single crystal of lead-tungstate produced of proposed method possesses high service properties such as increased light output of scintillations and luminescence spectrum displaced to green region relative to material described in prototype that extends the field of its application. Scintillation single crystal may be used for registration and spectrometry of particles and quanta in devices of physics of high, medium and low energies (above 100 MeV), particularly, in detectors of electromagnetic calorimeters of colliders, positron emission tomography using time-of-flight method of registration. EFFECT: higher efficiency. 1 tbl, 1 ex
申请公布号 RU2164562(C1) 申请公布日期 2001.03.27
申请号 RU20000103951 申请日期 2000.02.18
申请人 ANENKOV ALEKSANDR NIKOLAEVICH;KORZHIK MIKHAIL VASIL'EVICH;KOSTYLEV VADIM LEONIDOVICH;LIGUN VLADIMIR DMITRIEVICH 发明人 ANENKOV A.N.;KORZHIK MIKHAIL VASIL'EVICH;KOSTYLEV V.L.;LIGUN V.D.
分类号 C30B29/32;C30B15/04;(IPC1-7):C30B29/32 主分类号 C30B29/32
代理机构 代理人
主权项
地址