发明名称 |
Interlevel dielectric with air gaps to lessen capacitive coupling |
摘要 |
A reduced permittivity interlevel dielectric in a semiconductor device arranged between two levels of interconnect. The dielectric comprises a first dielectric layer preferably from a silane source deposited on a first level interconnect to form air gaps at midpoints between adjacent first interconnect structures, a second dielectric containing air gap trenches at spaced intervals across the second dielectric, and a third dielectric formed upon said second dielectric. A second interconnect level is formed on the third dielectric.
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申请公布号 |
US6208015(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19980014192 |
申请日期 |
1998.01.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BANDYOPADHYAY BASAB;FULFORD, JR. H. JIM;DAWSON ROBERT;HAUSE FRED N.;MICHAEL MARK W.;BRENNAN WILLIAM S. |
分类号 |
H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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