| 发明名称 |
Method for manufacturing a semiconductor device |
| 摘要 |
A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.
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| 申请公布号 |
US6207469(B1) |
申请公布日期 |
2001.03.27 |
| 申请号 |
US19980177805 |
申请日期 |
1998.10.23 |
| 申请人 |
PIONEER ELECTRONIC CORPORATION |
发明人 |
OTA HIROYUKI;KIMURA YOSHINORI;MIYACHI MAMORU |
| 分类号 |
H01L21/28;H01L21/205;H01L21/268;H01L21/324;H01L33/12;H01L33/32;H01L33/36;H01S5/00;H01S5/323;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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