| 摘要 |
A method of avoiding deposition of particles from a film deposited on a wall of a film deposition apparatus, onto a film deposited in the apparatus, the method including directly heating a wall of a reaction chamber, before placing a wafer on a susceptor in the reaction chamber, to at least a wall film peeling temperature at which a wall film does not peel from the wall; placing a wafer in the reaction chamber, heating the wafer, and depositing a film on the wafer without directly heating the wall; ending heating of the wafer after deposition of the film and directly heating the reaction wall of the reaction chamber to at least the wall film peeling temperature; and removing the wafer from the reaction while the wall of the reaction chamber is maintained at a temperature at least equal to the wall film peeling temperature.
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