发明名称 Charge-coupled device with potential barrier and charge storage regions
摘要 A two-phase, single-ply-electrode type charge-coupled device is provided that has a pair of a potential barrier region and a charge storage region underlying one charge transfer electrode. The charge storage region is formed in such a manner that the potential of the charge storage region becomes gradually deep in charge transfer direction. This structure enables smooth charge transfer.
申请公布号 US6207981(B1) 申请公布日期 2001.03.27
申请号 US19980187844 申请日期 1998.11.06
申请人 NEC CORPORATION 发明人 HATANO KEISUKE;NAKASHIBA YASUTAKA
分类号 H01L21/339;H01L27/148;H01L29/10;H01L29/762;H01L29/768;(IPC1-7):H01L29/768 主分类号 H01L21/339
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