发明名称 |
Charge-coupled device with potential barrier and charge storage regions |
摘要 |
A two-phase, single-ply-electrode type charge-coupled device is provided that has a pair of a potential barrier region and a charge storage region underlying one charge transfer electrode. The charge storage region is formed in such a manner that the potential of the charge storage region becomes gradually deep in charge transfer direction. This structure enables smooth charge transfer.
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申请公布号 |
US6207981(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19980187844 |
申请日期 |
1998.11.06 |
申请人 |
NEC CORPORATION |
发明人 |
HATANO KEISUKE;NAKASHIBA YASUTAKA |
分类号 |
H01L21/339;H01L27/148;H01L29/10;H01L29/762;H01L29/768;(IPC1-7):H01L29/768 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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