Multi-level flash memory using triple well process and method of making

摘要

A multi-level flash memory cell formed in a semiconductor substrate. The memory cell comprises: (a) a deep n-well formed in said semiconductor substrate; (b) a p-well formed within said deep n-well; (c) a first insulating layer formed over said p-well; (d) three floating gates adjacent to and insulated from one another and lying atop said first insulating layer; (e) source and drain regions formed in said p-well and on either side of said three floating gates; (f) a second insulating layer atop said three floating gates and said drain and source regions; and (g) a control gate formed atop said second insulating layer.