发明名称 |
Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film |
摘要 |
A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.
|
申请公布号 |
US6207489(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19990393186 |
申请日期 |
1999.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM KAB-JIN;WON SEOK-JUN;PARK KI-YEON;HYUNG YONG-WOO;PARK YOUNG-WOOK |
分类号 |
C03C23/00;C23C16/40;H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
C03C23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|