发明名称 Layer-structured oxide and process of producing the same
摘要 A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400° C. for several ten minutes by a self-flux method using Bi2O3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi2-aMe1+bR2O9+c where a, b, and c are values in ranges of 0<a<2, 0<b<=0.4, and -0.3<=c<=1.4. The layer-structured oxide exhibits a paraelectric characteristic or a ferroelectric characteristic at a composition in a specific range out of the stoichiometric composition.
申请公布号 US6207082(B1) 申请公布日期 2001.03.27
申请号 US19970848613 申请日期 1997.04.29
申请人 SONY CORPORATION 发明人 SUZUKI MASAYUKI;NAGASAWA NAOMI;MACHIDA AKIO;AMI TAKAAKI
分类号 C30B29/22;C01G29/00;C01G35/00;C30B9/00;C30B29/68;H01L21/316;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01B1/02 主分类号 C30B29/22
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