| 摘要 |
PROBLEM TO BE SOLVED: To prepare a low-cost thin dielectric film having <=0.5 μm thickness and a high dielectric constant without using a single crystal substrate or a special film forming method and to provide a capacitor. SOLUTION: The thin dielectric film 3 has a composition containing PbxTiO3 (0.9<=x<1.3) and 0.001-20 mol% Li based on the amount of the PbxTiO3 and has <=5,000 Å thickness. The capacitor 5 has a capacitor insulating film having a composition containing PbxTiO3 (0.9<=x<1. 3) and 0.001-20 mol% Li based on the amount of the PbxTiO3 and having <=5,000 Å thickness and electrodes formed on both sides of the capacitor insulating film. At least one of the electrodes comprises Pt or Ir having 200-3,000 Å film thickness. |
