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发明名称
METHOD FOR FORMING MONOCRYSTALLINE SILICON LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20010023407(A)
申请公布日期
2001.03.26
申请号
KR1020007002049
申请日期
2000.02.28
申请人
发明人
分类号
H01L21/205
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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