| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low-temperature heat treatment method which is free from having any adverse effect upon an element constitution, for filling up oxygen cavities with oxygen in a high dielectric oxide film, or for removing an unnecessary oxide film formed inside a semiconductor device. SOLUTION: As the results obtained when no heat treatment is performed (a), when heat treatment is performed (b), and when heat treatment is performed while a electron beam is projected (c), heat treatment is performed at a temperature of <=700 deg.C in a normal-pressure oxygen atmosphere in the filling of oxygen with oxygen, or at a temperature of <=500 deg.C in a reducing or inert gas atmosphere in the removing of an unnecessary oxide film. Both treatment are performed while the electron beam is projected. |
