| 摘要 |
PROBLEM TO BE SOLVED: To secure large capacitor capacitance by forming capacitors of adjacent memory cells in different layers so that the flat regions in which capacitors are formed are overlapped one another. SOLUTION: After removing the resist, an upper-layer insulation film 19 is formed on the entire surface. An upper-layer contact hole 12 is buried, and at the same time a conductive film is formed so that it covers the entire surface. Next, a resist on which patterning is performed is formed. Using the resist as a mask, the conductive film is etched, and an upper-layer storage 14 is formed. After removing the resist, an upper-layer insulation film 21 is formed on the entire surface. Then, an upper-layer cell plate 20 is formed on the entire surface, and lower-layer capacitor 22 and an upper-layer capacitor 23 are formed. Thus, the capacitors of the adjacent memory cells are formed in different layers so that the flat regions in which the storage nodes of the adjacent capacitors are formed are overlapped one another. |
