| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of leakage currents by suppressing the amount of organic residues left in a (Ba, Sr)TiO3 thin film. SOLUTION: A method for manufacturing capacitor includes a step of forming a lower electrode (step S1), a step of depositing an amorphous dielectric thin film containing Ba, Sr, Ti, and O as main ingredients on the lower electrode (step S2), and a step of annealing the dielectric thin film at a temperature lower than the crystallization temperature of the thin film in an oxidizing atmosphere (step S3). The method also includes a step of annealing the dielectric thin film at a temperature higher than the crystallization temperature (step S4), and a step of forming an upper electrode on the dielectric thin film (step S5). |
