CHEMICAL MECHANICAL POLISHING PROCESS METHOD

摘要

PROBLEM TO BE SOLVED: To enable a metal chemical mechanical polishing process to be quickly controlled in performance by a method wherein an indicator region on a wafer is checked, and a chemical mechanical polishing machine is regulated in operation corresponding to a check result. SOLUTION: An indicator region is capable of containing a macro block composed of a large number of blocks. In the above indicator region, a maximum line width is 20 μm at a given mask level, and a 90% maximum pattern factor is possible. A wafer is completely dished out through this preferable arrangement or checked by discriminating a block which partially becomes zero in thickness. A block 86 which is completely dished out is distinguished from not only a block 91 where a dish liner is not exposed but also a block 90 which is partially dished. A chemical mechanical polishing machine is controlled in operation corresponding to the check result.