| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent erroneous data by holding surely a write-in/erasion state in a non-volatile memory being electrically rewritable. SOLUTION: This circuit is provided with reference current cells 3a-3c outputting reference current Iref1-Iref3, sense amplifiers SA1-SAS3 comparing a current Icell from a memory cell with each reference current Iref1-Iref3, a read-out/write-in/erasion circuit 4 performing processing of read-out, write-in, and erasion of data for a memory cell, and a control circuit discriminating whether a current Icell exceeds a reference current Iref1 at the time of reading out data or not, outputting corresponding data respectively depending on the discriminated result, further, when a current Icell exceeds a reference current Iref2 or does not exceed a reference current Iref3, makes the read-out/write-in/ erasion circuit perform processing of erasing again or rewriting for a memory cell corresponding to a current Icell.</p> |
