| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for the production of an optical waveguide with a ultrasmall size, low loss and high dimensional accuracy. SOLUTION: Si plates 2 disposed to surround a substrate 1 adsorb and trap the radicals produced by the decomposition of an etching gas by plasma so that the radical reaction on the pattern side faces of the etched film can be decreased and so that etching on the pattern side face can be suppressed. By this suppressing effect, the film can be etched while keeping the dimensional accuracy of the core and the perpendicularity of the cross section of the core. Therefore, by etching by this method, the waveguide can be formed into a ultrasmall size, having a low loss, and waveguide type optical parts can be realized for practical use. |
