| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a heat sink for a semiconductor device by which a heat sink for a semiconductor deice coated with a blackened coating layer can be manufactured efficiently. SOLUTION: This method includes a forming process, in which intermediate process materials 25 formed separately by arranging a plurality of heat sinks 12 are formed on a bar 11, composed of copper material by press working or etching, a resist film forming process in which a region, where the heat sink of the intermediate process material is formed, is coated with stripe plating resist film 26, a partial plating process in which a nickel plating layer 27 is formed on exposed portions of the intermediate process material 25 coated with a stripe plating resist film 26, a resist film removal process, in which the stripe plating resist film 26 is removed from the intermediate process material 25 on which the nickel plating layer 27 is partially formed and a blackening process, in which a blacked coating layer 28 is formed on a surface of the intermediate process material 25 from which the stripe plating resist film 26 is removed. |
