| 摘要 |
PROBLEM TO BE SOLVED: To obtain an effective countermeasure against ESD(electrostatic discharge) for a semiconductor device having a diffusion layer structure in which an impurity is diffused at a high concentration in a diffusion layer in which the impurity is diffused at a low concentration. SOLUTION: In diffusion layers respectively constituting a collector region 4, an emitter region 4, and a base region 5, two or more rows of high- concentration diffusion layers (9, 10, and 11) are formed in the transversal directions of the diffusion layers. In these diffusion layers (9, 10, and 11), contacts 12, 13, and 14 are formed, respectively. When breakdown occurs in the diffusion layers (9, 10, and 11), the heat generated from the broken down portion is diffused to the contacts 12, 13, 14 and radiated from the contacts 12, 13, and 14. |
