| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable performing redundant relieving in a test after assembling and to simplify constitution of a redundant circuit in a non-volatile memory. SOLUTION: This device is provided with a redundant information storing memory cell array 12 consisting of one part of a non-volatile memory array having at least two bits and storing redundant information and a redundant circuit 19. A defective column address is replaced by a redundant column address by information of a column address by a redundant circuit 19 based on redundant information stored in the redundant information storing memory cell array 12, when it is a row address, as redundant relieving is performed using a non-volatile memory by replacing a row address of a defective data position with a redundant row address by a row address and information of a bit position of data, a special device is not required, in a test in a wafer state, it is confirmed that the device has a defective bit which can be replaced with a redundant circuit, and redundant relieving can be performed in a test after assembling.</p> |
