| 摘要 |
PROBLEM TO BE SOLVED: To improve temperature evenness on the surface of a wafer by supplying a pre-heated mixed gas in a processing chamber while the wafer is thermally processed. SOLUTION: A reactive device 20 comprises a pre-heating unit 60 connected for operation. The pre-heating unit 60 is used to pre-heat a mixed gas to a preset pre-heating temperature before the mixed gas is supplied in a processing chamber 21. The pre-heating unit is connected to a gas inlet 40 of the reactive device 20, and comes in the processing chamber 21 as soon as the pre-heated mixed gas is discharged from the pre-heating unit 60. The pre-heating unit 60 comprises a pre-heating chamber 662, and the mixed gas is pre-heated when it passes there. The pre-heating unit 60 also comprises a pre-heating source 664 which generates a heat energy. In addition, the pre-heating unit also comprises a pre-heating temperature sensor 666 which monitors the temperature of mixed gas.
|
