摘要 |
PROBLEM TO BE SOLVED: To measure only a specific organic residue minutely adhering onto a wafer in a simple method with a good sensitivity by intensity analyzing gas components of a solute component adhering on the wafer which are desorbed in vacuum by a mass spectrograph, measuring a desorption temperature and an intensity of gas molecules, and evaluating on the basis of a preliminarily formed calibration curve. SOLUTION: A sample wafer with a considerably minute amount of a resist residue adhered is placed on a sample-moving stage 2, preliminarily evacuated in a preliminary evacuation chamber 3 for sample exchange, introduced into a vacuum measurement chamber 5 through a gate valve 4 and placed on a sample-heating stage 6. The sample on the sample-heating stage 6 is heated by infrared rays from an infrared-introducing device 7 outside a vacuum system. A gas component of a solute component is desorbed at a temperature whereat the solute component of a specific organic substance adhering on the wafer is desorbed, and intensity analyzed by a quadrupole mass spectrograph 8. A desorption temperature and an intensity of desorbed gas molecules are measured. The specific organic substance adhering on the wafer is evaluated on the basis of a preliminarily formed calibration curve in relation to a specific fragment component.
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