| 摘要 |
PROBLEM TO BE SOLVED: To provide more minute SRAM by preventing connections between adjoining contact holes. SOLUTION: A memory cell 100 of an SRAM comprises gate electrodes 161, 162, and 163 formed on a silicon substrate and an interlayer insulating film covering the gate electrodes 161, 162, and 163. The interlayer insulating film comprises contact holes 121-130 reaching active regions 101, 102, 103, and 104 as well as contact holes 131 and 132 reaching the gate electrode 162 and 163. The contact holes 121-132 are formed in lattice. |
