| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a photovoltaic device where an amorphous layer is never delaminated from a fine crystal layer. SOLUTION: A light-transmission conductive film 2, a P-type amorphous silicon layer 3, an I-type amorphous silicon layer 4, an N-type microcrystal silicon layer 5, and a back electrode film 6 are laminated on a light-transmitting substrate 1, and the thicknesses of the layers 3, 4, and 5 are so set as to satisfy formulas (1) and (2), 50Å<dc1<da1×α1... (1) 0.124<α1<0.130... (2) where da1 denotes the total thickness (Å) of the P-type amorphous silicon layer 3 and the I-type amorphous silicon layer 4, and dc1 denotes the thickness (Å) of the N-type microcrystal silicon layer 5.</p> |
