| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a photomask by which a desired resist pattern can be formed by preventing a remaining resist caused by blotting defects and slits from being formed. SOLUTION: This photomask 1 is provided with a light shielding slit 12 and a memory cell light shielding area 13 as a light shielding area. At the angular part of the area 13, a protruding part 12a being the end part of the slit 12 protrudes, so that light diffraction at the part can be restrained, and a non-exposure cell can be perfectly covered by the remaining resist. Since the two different protruding parts 12a do not cross each other, the occurrence of the remaining resist caused by the crossing of the parts 12a can be prevented. Consequently, the disturbance of the resist pattern can be prevented.</p> |
