| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which is excellent in performance such as operation loss, breakdown strength, and an EMC level and high in reliability. SOLUTION: A lightly doped n--type semiconductor layer 19 is provided between a p+-type semiconductor substrate 10 and an n+-type semiconductor layer 11 in a conventional PT-type IGBT structure, and furthermore a low life time layer 20 is provided inside the N--type semiconductor layer 19. By this structure, a depletion layer between the layer 19 and the substrate 10 gets wider, the device of this constitution can be improved on an ECM level as highly as a device of NPT type. As a parasitic PNP transistor is enlarged in base width, the device can be more enhanced in breakdown strength than a device of conventional PT type. The base layer of this device is much smaller in substantial thickness than that of a device of NPT-type and nearly equal to than of device of PT-type, and the low life time layer 20 is provided, so that a semiconductor device having a low ON-state voltage and a low tail current can be realized.
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