| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a protective layer and a scintillator are hard to separate by forming a separation preventive layer between the protective layer and the scintillator. SOLUTION: A separation preventive layer 110 is formed in such a way that a general sputtering operation of the like is used, that it is vapor-deposited at the temperature of a substrate 101 in a range of 200 deg.C or lower at which the degradation of a photosensor part 102 and that of a TFT switching part 103 are suppressed and that it is patterned via a photolithographic process. As the separation preventive layer 110, a metal compound such as antimony sulfide or the like may be used. Then, when a scintillator 121 is vapor-deposited on the separation preventive layer 110, its bonding force is enhanced. After a plurality of small sensor panels are pasted, the scintillator 121 can be vapor- deposited uniformly on a face which is flattened by a second protective layer 112. At the same time, the bonding force of the second protective layer 112 to be scintillator 121 can be intensified. In addition, the selection width of a material for the first and second protective layers 111, 112 can be expanded.
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