| 摘要 |
PROBLEM TO BE SOLVED: To improve a semiconductor device in cooling efficiency by a method wherein metal electrodes are jointed to an insulation board, a semiconductor chip is bonded to the metal electrodes, and the semiconductor chip, the insulating board, and the metal electrodes are housed in a resin package. SOLUTION: A power semiconductor device has such a structure where insulation boards 2 are jointed on a cooler 12 which is hollow and possessed of a cooling medium path 19, metal electrodes 3 are bonded on the insulation boards 2, and IGBTs 41 to 46 as semiconductor chips and diodes 131 to 136 are jointed to the electrodes 3. Furthermore, buffer plates 141 to 144 which buffer thermal stress are joined to the IGBTs 41 and 42 and the diodes 131 and 132. The IGBTs 41 to 46, the diodes 131 to 136, the insulation board 2, the metal electrodes 3, and the buffer plates 141 to 144 are housed in a resin package 5. |
