发明名称 |
LIQUID CRYSTAL DISPLAY DEVICE AND ITS MANUFACTURE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a liquid crystal display device utilizing a thin film transistor, which is reduced in defect and is capable of being manufactured in a high yield. SOLUTION: A gate wiring 2 and a gate insulating film 3 are successively formed on a glass substrate 1 in this order and a semiconductor layer 4 consisting of an i-amorphous silicon layer and constituting a channel part 16 and an ohomic contact layer 5 consisting of an n+-amorphous silicon layer are successively formed on the gate insulating film 3 in this order. Finally a conductive layer consisting of two layers is formed on the n+-amorphous silicon layer by a sputtering film-forming treatment using chromium as a target material in either case to form a source electrode 12 or a drain electrode 13 having a excellent step coverage coated film property.</p> |
申请公布号 |
JP2001075125(A) |
申请公布日期 |
2001.03.23 |
申请号 |
JP19990253442 |
申请日期 |
1999.09.07 |
申请人 |
ADVANCED DISPLAY INC |
发明人 |
NAKAHORI MASAKI;HINO TERUSHIGE;IMAMURA TAKUJI |
分类号 |
H01L29/786;G02F1/136;G02F1/1365;G02F1/1368;H01L21/28;(IPC1-7):G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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