| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a solid-state image sensing element which is constructed so that an area of an opening part can be enlarged practically. SOLUTION: A solid-state image sensing element 20 is formed by providing a light receiving sensor 3 which performs photoelectric conversion to a surface layer of a base 2, and providing transfer electrodes 4, 5 for transferring charge formed in a light receiving sensor onto the base 2 and a light screening film 6 covering the same. A lattice-like or stripe-like light screening wall 21 which becomes a partition for picture element isolation is provided on the light screening film 6. Each picture element partitioned by a light screening wall is provided with inlay lenses 22, 23 positioned in part immediately above a light receiving sensor part 3. A flattened passivation film 27 is provided on the light screening wall. A color filter layer 28 is provided on the passivation film 27. An on-chip lens 29 is provided on the color filter layer 28.</p> |
