| 摘要 |
PROBLEM TO BE SOLVED: To obtain a light-emitting element array exhibiting high light-emitting efficiency and requiring low drive voltage. SOLUTION: A semi-insulating GaAs substrate 11 has thereon a laminated structure consisting of a semi-insulating GaAs buffer layer 12, an n-type AlxGa1-xAs clad layer 13, an n-type AlyGa1-yAs active layer 14, an n-type AlzGa1-zAs clad layer 15, and an n-type GaAs contact layer 16. This laminated structure is provided with Zn diffused layers 17 to 19. Furthermore, the Si impurity concentrations of the n-type layers 13 to 16 range from 5×1017 to 2×1018 [per cm3]. As a result of this arrangement, a light-emitting element array is obtained, which exhibits high light-emitting efficiency and requires low drive voltage. |
