| 摘要 |
PROBLEM TO BE SOLVED: To obtain a group III nitride type compound semiconductor element which will not cause a semiconductor layer to be cracked, warped or dislocated due to misfit. SOLUTION: An AlGaN (AlxGa1-xN, 0<x<1) substrate 1 is used as a group III nitride type compound semiconductor element substrate. In laminating AlGaN (AlxGa1-xN, 0<x<1) as clad layers 2, 4, even if a thick clad layer is formed, it will hardly crack. By making the Al compsn. of the AlGaN (AlxGa1-xN, 0<x<1) substrate 1 set near to those of the AlGaN (AlxGa1-xN, 0<x<1) layers 2, 4 of the group III nitride type compound semiconductor element, a substrate having fewer occurrences of cracks can be obtained. |
