METHOD FOR INTRODUCING IMPURITY TO SEMICONDUCTOR LAYER, AND MANUFACTURE OF THIN-FILM TRANSISTOR AND SEMICONDUCTOR DEVICE,申请号JP19980052460-传众专利搜索

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发明名称	METHOD FOR INTRODUCING IMPURITY TO SEMICONDUCTOR LAYER, AND MANUFACTURE OF THIN-FILM TRANSISTOR AND SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH11251259(A)	申请公布日期	1999.09.17
申请号	JP19980052460	申请日期	1998.03.04
申请人	SEIKO EPSON CORP	发明人	YUDASAKA KAZUO
分类号	B41J2/01;H01L21/228;H01L21/336;H01L29/786;(IPC1-7):H01L21/228	主分类号	B41J2/01
代理机构		代理人
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