METHOD FOR GROWING III-V NITRIDE SEMICONDUCTOR AND VAPOR GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the yield of the raw material of a III-V nitride semiconductor and to make faster the growing speed of the semiconductor. SOLUTION: In a vapor growth device 1 which grows a III-V nitride semiconductor (GaN), a container 11 which houses a group III element is arranged. The device 1 is also provided with a reaction chamber 3 having an introducing port 7 through which nitrogen is introduced, an exciting means 15 which excites the nitrogen introduced through the port 7 with plasma, and a heating means 13 which heats a seed crystal 10 and the container 11 both of which are set up in the reaction chamber 3. At the time of growing the III-V nitride semiconductor on the seed crystal 10, the nitrogen is introduced through the introducing port 7 and the gas in the chamber 3 is not discharged to the outside.