| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ultraviolet light-emitting body which can emit ultraviolet light at room temperature and whose band gap can be adjusted within a wide range, and a manufacturing method therefor. SOLUTION: An ultraviolet light-emitting body 1 has a semiconductor mixed crystal 4, based on zinc oxide formed on the (001) plane of a sapphire (α-Al2O3) substrate 2, and a CW-oscillated He-Cd laser or an electron beam is irradiated onto the entire surface of the mixed crystal 4 at a room temperature to cause ultraviolet light to be emitted. The mixed crystal 4 has ZnO-based composition ZnxCyOz, having a band gap larger than that of ZnO which at room temperature is 3.3 eV. The mixed crystal 4 has x, y and z for its composition of ZnxCyOz adjusted by adjusting the lowgrowing temperature to 300 deg.C or lower to increase its band gap. |
