| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of cracks due to lattice mismatching, existing between a current constricting layer and an n-type layer by a method, where an AlGaInN layer is deposited from the place separated further than by a specified distance from the contact surface of a substrate with a buffer layer at the film-forming temperature in a specific range between p-type electrodes. SOLUTION: An AlN buffer layer 2, an n-type GaN layer 3, a low- temperature AlGaN intermediate layer 4 and an AlGaInN current constricting layer 5, deposited at a film-forming temperature of 300 to 800 deg.C from the height higher than 0.10 μm from the layer 2, are formed on a sapphire substrate 1 by crystal growth. After that, a striped aperture 6 is formed, in such a way as to make the layers 4 and 5 penetrate. Moreover, a first clad layer 7, a first light guide layer 8, a multi-quantum well active layer 9, a cap layer 10, a second light guide layer 11, a second clad layer 12 and a contact layer 13 are grown on the aperture 6 and lastly, a p-type electrode 14 is formed directly over the striped aperture 6 and an n-type electrode 15 is formed on the surface of the layer 3 etched, until one part of the layer 3 is exposed. |
