| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an insulating film which allows formation of an insulating film of lower dielectric constant, so that the operation speed of a device does not drop, even if the design rule for a semiconductor device is made more fine for higher integration. SOLUTION: When an inorganic coat insulating film comprising Si-H combination is formed, it is baked in an atmosphere and its dielectric constantεis made concentration is lowered lower than of an SiOF film. In order to lower the oxygen concentration, when the coat insulating film is baked, the atmosphere in a baking oven, for example, is decompressed or replaced with an inert gas.
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