| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a satisfactory characteristic by using a crystalline silicon film of good quality, which is not affected by a natural nucleus. SOLUTION: The catalyst substance of Ni and the like is introduced into an amorphous silicon film installed on an insulative substrate 1 and a semiconductor device is produced by using a region crystallized by a heat treatment within natural nucleus generation latent time. The amorphous silicon film 2 is formed on a quartz substrate 1 by using Si1H6 gas, a Ni thin film 5 is formed thereon and a catalyst substance is introduced through a catalyst substance introduction window 4. Then, TFT(thin film transistor) is produced by using the crystallized region by the heat processing within a time calculated by an expression of t=t0exp (E/kT) (In the expression, (t) expresses heat treatment time (minute), t0: frequency factor=4.2×10-20 (minute), E: activated energy=3.8 [eV], k: Boltzmann's factor=8.6 [eV/K] and T: heat treatment temperature [K]. It is desirable that the heat treatment temperature is in the range of 550 to 650 deg.C.
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