| 摘要 |
PROBLEM TO BE SOLVED: To enhance a gate in width per unit area so as to improve ON-state resistance in area efficiency by a method wherein a second gate is separated from a first gate for a prescribed distance. SOLUTION: A first gate 13-1 is positioned above a center line and composed of a vertical part 13-1a, an up-sloping part 13-1b, a vertical part 13-1c, a down- sloping part 13-1d, and a vertical part 13-1e, extending from the one side of a semiconductor region of a MOS transistor 10 to the opposed other side of the semiconductor region. A second gate 13-2 is positioned below the center line and arranged separate from the first gate 13-1 for prescribed distance. By this setup, a gate can be enhanced in width per unit area, and an ON-state resistance can be improved in area efficiency.
|
