| 摘要 |
PROBLEM TO BE SOLVED: To prevent breake, etc., of a portion sensitive to influence of thermal stress by forming an insulation film in a part on a semiconductor substrate, forming a buffer film to cover a part of the insulation film and forming a functional film to cover a part of the buffer film. SOLUTION: A passivation film 2 is formed on a semiconductor substrate 8 wherein a diaphragm 9 is formed in a semiconductor microsensor 1, and an insulation film 3 formed of a silicon nitride film is formed on the passivation film 2. A heater wiring 4 for heating is formed below the insulation film 3 and a buffer film 5 is formed on the insulation film 3. A functional film 6 wherein catalytic metal such as Pd is added to SnO2 which is an oxide semiconductor is further formed on the film 5 and a detection electrode 7 for signal collecting is formed below the functional film 6. As a result, breake, etc., of a portion is sensitive to influence of heat stress can be prevented.
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