| 摘要 |
PROBLEM TO BE SOLVED: To obtain the flat etched surface of a silicon work whose surface is partially loaded with arsenic through etching, by a method wherein the work is subjected to etching which is carried out by the use of fluorine radicals and sulfur radicals generated by activating processing gas which contains various gases include fluorine atoms, oxygen atoms, and sulfur atoms. SOLUTION: Gases which contain fluorine atoms, oxygen atoms, and sulfur atoms and are fed from gas bombs 24, 26, and 28 are introduced into a quartz tube 10. Microwaves generated by a microwave generator 27 are applied to gases inside the plasma generating chamber 14 to produce plasma. The surface of a work W inside the processing chamber 2 is etched by the use of processing gas which contains fluorine radicals, sulfur radicals and others. Sulfur radicals react more swiftly than fluorine radicals, so that arsenic residing in the surface of the work W reacts on sulfur radicals first. By this setup, a part of the work W loaded with arsenic atoms is hard to etch with fluorine radicals, and an etching rate difference caused by the addition of arsenic is restrained from occurring in a silicon material.
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