发明名称 METHOD FOR MANUFACTURING CRYSTAL AND CRYSTAL
摘要 PROBLEM TO BE SOLVED: To distribute dopant cations in a crystal matrix by arranging a specific doping material on the anode side and a specific crystal matrix on the cathode side, impressing DC voltage on the doping material and the crystal matrix, generating the dopant cations in the doping material, and moving the dopant cations in the cathode direction. SOLUTION: A crystal matrix 2 is a monocrystal substance expressed by X2Y3 (X is a metal ion such as Al3+, and Y is an anion such as WO42-), and a dopant metal ion is a polycrystalline substance expressed by AnDm (A is an alkali ion, D is an anion such as WO42-, and (n), (m) are an integer of 1 to 3). A doping material 1 is arranged on the anode 3 side, the crystal matrix 2 is arranged on the cathode 4 side, and DC voltage is impressed on the doping material 1 and the crystal matrix 2 to generate the dopant metal ion in the doping material 1 to substitute a part of metal ions in a crystal with the dopant metal ion.
申请公布号 JP2001076532(A) 申请公布日期 2001.03.23
申请号 JP19990248163 申请日期 1999.09.02
申请人 UNIV OSAKA 发明人 IMANAKA NOBUHITO
分类号 C30B29/32;C30B31/02;H01B1/06;(IPC1-7):H01B1/06 主分类号 C30B29/32
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