| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which displays an excellent negative differential conductance or a negative mutual conductance and can be manufactured through a rather simple manufacturing process. SOLUTION: A semiconductor device is equipped with a channel layer 13 which functions as a conduction region and a floating region 18 electrically isolated from the channel layer 13. A quantum well layer composed of a pair of barrier layers 15 and 17 and a well layer 16 pinched between the barrier layers 15 and 17 is provided between the channel layer 13 and the floating region 18. A source electrode 22 and a drain electrode 23 are electrically connected to the channel layer 13. A gate electrode 21 is provided above the floating region 18, but the well layer 16 is located below the region 18. When a drain voltage is varied to a prescribed gate voltage, a negative differential conductance occurs in drain current characteristics of a semiconductor device.
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