| 摘要 |
PROBLEM TO BE SOLVED: To obtain a fine, large-capacitance capacitor by forming the lower electrode of a capacitor, which consists of a first conductive layer and a granular second conductive layer positioned above the first conductive layer, and by forming a capacitor insulation film and a second electrode above the lower electrode. SOLUTION: After forming an isolating insulation film on the surface of an n-type (100) silicon substrate to form an element region, phosphorus ions are implanted to form an n+ difussion layer which functions as a contact, and a silicon oxide film is formed by the CVD method, then an opening is made. A polycrystal silicon film 85 is formed and subjected to heat treatment to diffuse phosphorous ions, and an oxide film which spontaneously develops on the surface of the polycrystal silicon film is removed, then a lower electrode 85 made of the phosphorus-added polycrystal silicon film is formed. An amorphous silicon film 87 is deposited on the lower electrode 85. Heat treatment is performed to change the amorphous silicon film 87 into monocrystal silicon grains so that good unevenness is given to the surface. A phosphorus-added polycrystal silicon film is deposited, and patterning is performed on the film to form an upper electrode, thus, achieving a capacitor. |
