| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor storage device which is constituted by finely integrating memory cells each composed of a transistor and a ferroelectric capacitor without causing polarization characteristic deterioration. SOLUTION: In element forming areas 3 partitioned by element isolation films 2 on a silicon substrate, transistors QM are formed and ferroelectric capacitors C are formed on the transistors QM through first interlayer dielectric. Each capacitor C is formed in such a way that an upper electrode 3 is patterned and a ferroelectric film 12 and a lower electrode 11 both of which are paired to each other in the same pattern are worked, so that the film 12 and electrode 11 may get astride the upper electrode 13. Then an opening 10 is opened through the ferroelectric film 12 for getting contact with the lower electrode 11. After second interlayer dielectric is deposited and contact layers 15a and 15b for the capacitors C and contact layers 15c for transistor diffusion layers are buried in the second interlayer dielectric, conductor wirings 16a and 16b which connect the transistors QM to the capacitors C are formed.
|
