| 摘要 |
PROBLEM TO BE SOLVED: To form a contact which is high in stability and reliability without making a contact hole tapered or lowed. SOLUTION: An interlayer insulating film 9 and a polycrystalline Si film 10 are successively formed on an Si substrate 1 where a transistor is formed. An opening is provided to the polycrystalline Si film 10, and an inner wall film 12a is formed on the inner wall of the opening. An anisotropic etching process carried out by the use of a magnetron etching device and an ashing process for removing a fluorocarbon polymer 14 produced in the above etching process are repeatedly carried out three times or so, by which a contact hole 13 is provided to the interlayer insulating film 9 so as to extend to a source/ drain region 6.
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